I also want to make a clarification on a misunderstanding on "inner splash radius" as it pertains to air to air splash. I will try to find a clip of this as I saw it recently in either an ASL or Artosis stream. I have seen VODs where a goliath volley will shoot and one missile will land on the target, dealing damage, and the second missile will land far short and 'miss' dealing no damage. The parasitic capacitance has a great influence on the cutoff frequency, and limits the RF performance of the device.#62 I am very certain that the 1/256 miss chance DOES apply to anti air attacks. Finally, the high-frequency characteristics of the CNTFETs have been discussed based on the channel vertical electric field distributions.
It is also demonstrated that HALO-DMG structure possesses two perceivable steps in potential profile of the channel, which leads to another lateral electric field peak inside the channel, thus improve both carrier efficiency and the immunity against short-channel effects (SCE). The results show that the HALO-DMG structure decreases significantly the leakage current and increases on–off current ratio as well as cutoff frequency. Comparisons are made for electrical characteristics among four CNTFETs structures, which are conventional single-material-gate CNTFETs (C-CNTFETs), halo single-material-gate CNTFETs (HALO-CNTFETs), dual-material-gate CNTFETs (DMG-CNTFETs), and halo dual-material-gate CNTFETs (HALO-DMG-CNTFETs).
The simulations are based on two-dimensional non-equilibrium Green’s functions (NEGF) solved self-consistently with Poisson’s equations. For the first time, a novel single halo dual-material gate carbon nanotube Field-Effect Transistors (CNTFETs) with doped source and drain extensions is proposed and simulated using quantum simulation.
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